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MSM13Q/14Q
0.35µm Sea of Gates Arrays Data Sheet
 

Documents

»  PDF of this Data Sheet (243 KB) is available. MSM13Q-14Q.pdf
»  0.35µm Line Card. MSM13Q/14Q
This is an obsolete product. The document is for reference only.

Description

Oki's 0.35µm ASIC products deliver ultra high performance and high density at low power dissipation. The MSM13Q0000/14Q0000 series devices (referred to as "MSM13Q/14Q") are implemented with the industry-standard Cell-Based Array (CBA) architecture in a Sea-of-Gates (SOG) structure. Built in a 0.35µm drawn CMOS technology (with an L-Effective of 0.27µm), these SOG devices are available in three layers (MSM13Q) and four layers (MSM14Q) of metal. The semiconductor process is adapted from Oki's production-proven 64-Mbit DRAM manufacturing process.

The MSM13Q/14Q Series contains 6 arrays each, offering over 1 million raw gates and 352 I/O pads. Up to 66% and 90% of the raw gates can be used for the 3-layer and 4-layer arrays, respectively. Oki's 0.35µm family is optimized for 3.3-V core operation with optimized 3.3-V I/O buffers and 5-V tolerant 3.3-V buffers. These SOG products are designed to fit the most popular plastic quad flat packs (QFPs), thin QFPs (TQFPs), and plastic ball grid array (PBGA) packages.

The MSM13Q/14Q Series uses the popular CBA architecture from Silicon Architects of Synopsys which mixes two types of cells (8-transistor compute cells and 4-transistor drive cells) on the same die to deliver high gate density and high drives. The CBA is supported by a rich macro library, optimized for synthesis. Memory blocks are efficiently created by Oki's memory compilers to generate single- and dual-port RAM's in high-density and low-power configurations with synchronous RAM options.

As such, the MSM13Q/14Q series is well suited to memory-intensive designs with high production volumes approaching the real estate and cost savings of standard cells. At the same time, its SOG structure allows rapid prototyping turnaround times. Thus, Oki's MSM13Q/14Q family offers the best of two worlds: quick prototyping of a gate array and low production cost of a standard cell.

Oki's 0.35µm ASIC products are supported by leading-edge CAD tools including a synthesis-linked floorplanner, motive static timing analyzer, and H-clock tree methodology. They are further supported by specialized macrocells including phase-locked loop (PLL), pseudo-emitter coupled logic (PECL), peripheral component interconnect (PCI), universal synchronous receiver/transmitter (UART) cells, and ARM7TDMI RISC cores.

   

Features

»  0.35µm drawn 3- and 4-layer metal CMOS
»  Optimized 3.3-V core
»  Optimized 3.3-V I/O and 5-V tolerant 3.3-V I/O
»  Cell-Based Array SOG structure
»  Over 1.0M raw gates and 352 pads
»  User-configurable I/O with VSS, VDD, TTL, 3-state, and 1- to 24-mA options
»  Slew-rate-controlled outputs for low-radiated noise
»  62-ps typical gate propagation delay (for a 4x-drive inverter gate with a fanout of 2 and )mm of wire, operating at 3.3 V
»  H-clock tree cells which reduce the maximum skew for clock signals
»  User-configurable single and dual-port; synchronous or asynchronous memories
»  Specialized macrocells including PLL, PECL, PCI, UART, and ARM7TDMI
»  Floorplanning for front-end simulation, back-end layout controls, and link to synthesis
»  Joint Test Action Group (JTAG) boundary scan and scan-path ATPG
»  Support for popular CAE systems, including Cadence, IKOS, Mentor Graphics, Synopsys, Viewlogic, and Zycad